Current Issue : January-March Volume : 2023 Issue Number : 1 Articles : 5 Articles
As the sensing basis and data source of the new generation of information technology, sensors play a vital role in today’s information age. The purpose of this work is to construct a flexible ferroelectric field-effect transistor (FeFET) as a prototype for a multifunctional sensor for electronic skin. The FeFET device is fabricated from poly(vinylidene fluoride-dimethylsiloxane) (P(VDF-DMS)) and Si/Fe-doped indium oxide (SFIO). Furthermore, this device is capable of three-in-one sensing. Specifically, it can detect temperature changes from 0°C to 70 ° C and monitors external forces with a linear sensitivity of 4.6 nA·kPa-1 across a pressure range of 50 kPa to 150 kPa. Additionally, electrostatic interaction enables the gadget to detect the approach of a charged item. Furthermore, this gadget was built to detect physiological signals produced by the human body, such as pulse, respiration, and finger movements. It is very bend-resistant and retains transmission properties after 1200 cycles of bending. Moreover, we will examine the device’s sensitivity to temperature variations and charged particles when bent to a radius of 1.09 mm. This design will promote the next generation multifunctional E-skin....
TDLAS (tunable diode laser absorption spectroscopy) is an important gas analysis method that can be employed to obtain characteristic parameters non-invasively by the infrared absorption spectra of tracer molecules such as CH4, H2O and O2. In this study, a portable H2O-based TDLAS system with a dual optical path was developed with the aim of assessing the combustion characteristics of flammable gases. Firstly, a calculation method of gas characteristics including temperature and velocity combining absorption spectra and a HITRAN database was provided. Secondly, to calibrate and validate this TDLAS system precisely, a pressure vessel and a shock tube were introduced innovatively to generate static or steady flow fields with preset constant temperatures, pressures, or velocities. Static tests within environment pressures up to 2 MPa and steady flow field tests with temperatures up to 1600 K and flow velocities up to 950 m/s were performed for verification. It was proved that this system can provide an accurate values for high temperature and velocity gas flows. Finally, an experimental investigation of CH4/air flames was conducted to test the effectiveness of the system when applied to small diffusion flames. This TDLAS system gave satisfactory flame temperature and velocity data owing to the dual optical path design and high frequency scanning, which compensated for scale effects and pulsation of the flame. This work demonstrates a valuable new approach to thermal hazard analysis in specific environments....
The performance of monochromatic perovskite light-emitting diodes (PeLEDs) has undergone rapid development in recent years, while white PeLEDs are still in their infancy. The tandem devices prepared by connecting light-emitting units of different colors with intermediate connectors comprise one of the promising approaches for realizing white light emission. The intermediate connector plays a crucial role in determining the effectiveness of the light-emitting units. In this work, all-perovskite-based white LEDs are assembled by employing sky-blue (490 nm) and red (690 nm) perovskite emitters as active layers. With mixed p-type and n-type organic charge transport materials as the intermediate connector, the highest external quantum efficiency (EQE) of the device was 1.4%, the electroluminescence (EL) peak position of the blue light part was shifted to 512 nm, and the red light part was shifted to 673 nm. In contrast, with organic and inorganic charge transport materials as the intermediate connector, the devices exhibited better charge generation/injection capabilities and a record EQE of 8.5%. The EL peak position of the device prepared from the stored film was not shifted, implying that the organic/inorganic layer effectively suppresses halide migration. Our work paves the way for highly efficient tandem white PeLEDs....
The high-k-based MOS-like capacitors are a promising approach for the domain of nonvolatile memory devices, which currently is limited by SiO2 technology and cannot face the rapid downsizing of the electronic device trend. In this paper, we prepare MOS-like trilayer memory structures based on high-k ZrO2 by magnetron sputtering, with a 5% and a 10% concentrations of Zr in the Zr–ZrO2 floating gate layer. For crystallization of the memory structure, rapid thermal annealing at different temperatures between 500 ◦C and 700 ◦C was performed. Additionally, Al electrodes were deposited in a top-down configuration. High-resolution transmission electron microscopy reveals that ZrO2 has a polycrystalline–columnar crystallization and a tetragonal crystalline structure, which was confirmed by X-ray diffraction measurements. It is shown that the tetragonal phase is stabilized during the crystallization by the fast diffusion of oxygen atoms. The capacitance–voltage characteristics show that the widest memory window (ΔV = 2.23 V) was obtained for samples with 10% Zr annealed at 700 ◦C for 4 min. The charge retention characteristics show a capacitance decrease of 36% after 10 years....
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP layers were designed. The FP layers of the HEMTs dispersed the electric field between the gate and drain regions. The device with two FP layers exhibited a high off-state breakdown voltage of 1549 V because of the long distance between its first FP layer and the channel. The devices were subjected to high-temperature reverse bias and high-temperature gate bias measurements to examine their characteristics, which satisfied the reliability specifications of JEDEC....
Loading....